| 1 |
Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs0.5Sb0.5 epilayers grown on GaAs (001)
Nakamura S, Jayavel P, Koyama T, Hayakawa Y
Journal of Crystal Growth, 300(2), 497, 2007 |
| 2 |
Influence of arsenic temperature on the structural and electrical characteristics of InAsSb layers grown on GaAs by hot wall epitaxy
Nakamura S, Jayavel P, Koyama T, Kumagawa M, Hayakawa Y
Journal of Crystal Growth, 274(3-4), 362, 2005 |
| 3 |
Improvement of the structural and electrical properties of InAsSb epilayer using Sb-rich InAsSb buffer layer grown by hot wall epitaxy
Nakamura S, Jayavel P, Koyama T, Kumagawa M, Hayakawa Y
Journal of Crystal Growth, 280(1-2), 26, 2005 |
| 4 |
Growth of organic molecular single crystal trans-stilbene by selective self seeding from vertical Bridgman technique
Arulchakkaravarthi A, Jayavel P, Santhanaraghavan P, Ramasamy P
Journal of Crystal Growth, 234(1), 159, 2002 |
| 5 |
Investigations on the low-energy proton-induced defects on Ti/n-GaAs Schottky barrier diode parameters
Jayavel P, Kumar J
Journal of Crystal Growth, 210(1-3), 268, 2000 |
