검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices Suri M, Bichler O, Hubert Q, Perniola L, Sousa V, Jahan C, Vuillaume D, Gamrat C, DeSalvo B Solid-State Electronics, 79, 227, 2013 |
| 2 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |
| 3 |
Lateral coupling and immunity to substrate effect in Omega FET devices Ritzenthaler R, Cristoloveanu S, Faynot O, Jahan C, Kuriyama A, Brevard L, Deleonibus S Solid-State Electronics, 50(4), 558, 2006 |
| 4 |
Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates Jahan C, Faynot O, Tosti L, Hartmann JM Journal of Crystal Growth, 280(3-4), 530, 2005 |
| 5 |
Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains Hartmann JM, Clavelier L, Jahan C, Holliger P, Rolland G, Billon T, Defranoux C Journal of Crystal Growth, 264(1-3), 36, 2004 |