검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Growth of silicon carbide: process-related defects Yakimova R, Syvajarvi M, Iakimov T, Jacobsson H, Kakanakova-Georgieva A, Raback P, Janzen E Applied Surface Science, 184(1-4), 27, 2001 |
| 2 |
Growth of 3C-SiC using off-oriented 6H-SiC substrates Syvajarvi M, Yakimova R, Jacobsson H, Janzen E Materials Science Forum, 353-356, 143, 2001 |
| 3 |
High-resolution XRD evaluation of thick 4H-SiC epitaxial layers Jacobsson H, Yakimova R, Syvajarvi M, Birch J, Tuomi T, Janzen E Materials Science Forum, 353-356, 291, 2001 |
| 4 |
Polytype stability in seeded sublimation growth of 4H-SiC boules Yakimova R, Syvajarvi M, Iakimov T, Jacobsson H, Raback R, Vehanen A, Janzen E Journal of Crystal Growth, 217(3), 255, 2000 |
| 5 |
High growth rate epitaxy of thick 4H-SiC layers Syvajarvi M, Yakimova R, Jacobsson H, Linnarsson MK, Henry A, Janzen E Materials Science Forum, 338-3, 165, 2000 |