검색결과 : 10건
No. | Article |
---|---|
1 |
산화물이 코팅된 전도성 금속 분말의 제조 및 태양전지 전면 전극으로의 응용 박진경, 이영인 Korean Journal of Materials Research, 24(9), 502, 2014 |
2 |
Short-channel epitaxial germanium pMOS transistors Eneman G, De Jaeger B, Wang G, Mitard J, Hellings G, Brunco DP, Simoen E, Loo R, Caymax M, Claeys C, De Meyer K, Meuris M, Heyns MM Thin Solid Films, 518, S88, 2010 |
3 |
P plus /n junction leakage in thin selectively grown Ge-in-STI substrates Eneman G, Yang R, Wang G, De Jaeger B, Loo R, Claeys C, Caymax M, Meuris M, Heyns MM, Simoen E Thin Solid Films, 518(9), 2489, 2010 |
4 |
Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory Ho CY, He JH, Chang YP, Lien CH Thin Solid Films, 517(24), 6850, 2009 |
5 |
Leakage current study of Si1-xCx embedded source/drain junctions Simoen E, Vissouvanadin B, Taleb N, Gonzalez MB, Verheyen P, Loo R, Claeys C, Machkaoutsan V, Bauer M, Thomas S, Lu JP, Wise R Applied Surface Science, 254(19), 6140, 2008 |
6 |
Oxide-mediated fort-nation of epitaxy silicide on heavily doped Si surfaces and narrow width active region Chen YM, Tu GC, Wang YL Thin Solid Films, 498(1-2), 90, 2006 |
7 |
Characterization of the junction leakage of Ti-capped Ni-silicided junctions Toledo NG, Lee PS, Pey KL Thin Solid Films, 462-63, 202, 2004 |
8 |
Effects of surface oxide on SiGe/Si diode characteristics Hirose F Solid-State Electronics, 46(9), 1259, 2002 |
9 |
Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs Pretet J, Ioannou D, Subba N, Cristoloveanu S, Maszara W, Raynaud C Solid-State Electronics, 46(11), 1699, 2002 |
10 |
Source Drain Dislocations and Electrical Leakage in Titanium-Salicided CMOS Integrated-Circuits Guldi RL Journal of the Electrochemical Society, 141(7), 1957, 1994 |