화학공학소재연구정보센터
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No. Article
1 산화물이 코팅된 전도성 금속 분말의 제조 및 태양전지 전면 전극으로의 응용
박진경, 이영인
Korean Journal of Materials Research, 24(9), 502, 2014
2 Short-channel epitaxial germanium pMOS transistors
Eneman G, De Jaeger B, Wang G, Mitard J, Hellings G, Brunco DP, Simoen E, Loo R, Caymax M, Claeys C, De Meyer K, Meuris M, Heyns MM
Thin Solid Films, 518, S88, 2010
3 P plus /n junction leakage in thin selectively grown Ge-in-STI substrates
Eneman G, Yang R, Wang G, De Jaeger B, Loo R, Claeys C, Caymax M, Meuris M, Heyns MM, Simoen E
Thin Solid Films, 518(9), 2489, 2010
4 Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory
Ho CY, He JH, Chang YP, Lien CH
Thin Solid Films, 517(24), 6850, 2009
5 Leakage current study of Si1-xCx embedded source/drain junctions
Simoen E, Vissouvanadin B, Taleb N, Gonzalez MB, Verheyen P, Loo R, Claeys C, Machkaoutsan V, Bauer M, Thomas S, Lu JP, Wise R
Applied Surface Science, 254(19), 6140, 2008
6 Oxide-mediated fort-nation of epitaxy silicide on heavily doped Si surfaces and narrow width active region
Chen YM, Tu GC, Wang YL
Thin Solid Films, 498(1-2), 90, 2006
7 Characterization of the junction leakage of Ti-capped Ni-silicided junctions
Toledo NG, Lee PS, Pey KL
Thin Solid Films, 462-63, 202, 2004
8 Effects of surface oxide on SiGe/Si diode characteristics
Hirose F
Solid-State Electronics, 46(9), 1259, 2002
9 Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs
Pretet J, Ioannou D, Subba N, Cristoloveanu S, Maszara W, Raynaud C
Solid-State Electronics, 46(11), 1699, 2002
10 Source Drain Dislocations and Electrical Leakage in Titanium-Salicided CMOS Integrated-Circuits
Guldi RL
Journal of the Electrochemical Society, 141(7), 1957, 1994