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| No. | Article |
|---|---|
| 1 |
Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation Strel'chuk AM, Lebedev AA, Davydov DV, Savkina NS, Kuznetsov AN, Valakh MY, Kiselev VS, Romanyuk BN, Raynaud C, Chante JP, Locatelli ML Materials Science Forum, 457-460, 1133, 2004 |