검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Blocking sphingosine 1-phosphate receptor 2 accelerates hepatocellular carcinoma progression in a mouse model of NASH Yoshida T, Tsuchiya A, Kumagai M, Takeuchi S, Nojiri S, Watanabe T, Ogawa M, Itoh M, Takamura M, Suganami T, Ogawa Y, Terai S Biochemical and Biophysical Research Communications, 530(4), 665, 2020 |
| 2 |
JTE-607, a multiple cytokine production inhibitor, targets CPSF3 and inhibits pre-mRNA processing Kakegawa J, Sakane N, Suzuki K, Yoshida T Biochemical and Biophysical Research Communications, 518(1), 32, 2019 |
| 3 |
Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE Dheilly N, Planson D, Pagues G, Scharnholz S Solid-State Electronics, 73, 32, 2012 |
| 4 |
JTE-607, an inflammatory cytokine synthesis inhibitor, attenuates ischemia/reperfusion-induced renal injury by reducing neutrophil activation in rats Asaga T, Ueki M, Chujo K, Taie S Journal of Bioscience and Bioengineering, 106(1), 22, 2008 |
| 5 |
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Brosselard P, Bouchet T, Planson D, Scharnholz S, Paques G, Lazar M, Raynaud C, Chante JP, Spahn E Materials Science Forum, 483, 1005, 2005 |
| 6 |
The role of the ion implanted emitter state on 6H-SiC power diodes behavior. A statistical study Lazar M, Cardinali G, Raynaud C, Poggi A, Planson D, Nipoti R, Chante JP Materials Science Forum, 457-460, 1025, 2004 |
| 7 |
Design and implementation of the optimized edge termination in 1.8 W4H-SiC PiN diodes Sankin I, Draper WA, Merrett JN, Casady JRB, Casady JB Materials Science Forum, 457-460, 1101, 2004 |
| 8 |
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Brosselard P, Zorngiebel V, Planson D, Scharnholz S, Chante JP, Spahn E, Raynaud C, Lazar M Materials Science Forum, 457-460, 1129, 2004 |
| 9 |
Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation Strel'chuk AM, Lebedev AA, Davydov DV, Savkina NS, Kuznetsov AN, Valakh MY, Kiselev VS, Romanyuk BN, Raynaud C, Chante JP, Locatelli ML Materials Science Forum, 457-460, 1133, 2004 |
| 10 |
Optimization of JTE edge terminations for 10kV power devices in 4H-SiC Wang X, Cooper JA Materials Science Forum, 457-460, 1257, 2004 |