검색결과 : 29건
| No. | Article |
|---|---|
| 1 |
Comprehensive behavioral model of dual-gate high voltage JFET and pinch resistor Banas S, Panko V, Dobes J, Hanys P, Divin J Solid-State Electronics, 123, 133, 2016 |
| 2 |
Proposal of preliminary device model and scaling scheme of cross-current tetrode SOI MOSFET aiming at low-energy circuit applications Omura Y, Azuma Y, Yoshioka Y, Fukuchi K, Ino D Solid-State Electronics, 64(1), 18, 2011 |
| 3 |
Demonstration of the first SiC power integrated circuit Sheng K, Zhang YX, Su M, Zhao JH, Li XQ, Alexandrov P, Fursin L Solid-State Electronics, 52(10), 1636, 2008 |
| 4 |
Performance of SiC Cascode Switches with Si MOS Gate Brezeanu G, Boianceanu C, Brezeanu M, Mihaila A, Udrea F, Amaratunga G Materials Science Forum, 483, 825, 2005 |
| 5 |
Wannier-Stark Localization Effects in 6H-SiC JFETs Sankin VI, Shkrebiy PP, Lebedev AA Materials Science Forum, 483, 873, 2005 |
| 6 |
Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs Merrett JN, Williams JR, Cressler JD, Sutton A, Cheng L, Bondarenko V, Sankin I, Seale D, Mazzola MS, Krishnan B, Koshka Y, Casady JB Materials Science Forum, 483, 885, 2005 |
| 7 |
Polymeric integrated AC follower circuit with a JFET as an active device Liu YX, Cui TH Solid-State Electronics, 49(3), 445, 2005 |
| 8 |
Channel electron mobility in 4H-SiC lateral junction field effect transistors Sannuti P, Li X, Yan F, Sheng K, Zhao JH Solid-State Electronics, 49(12), 1900, 2005 |
| 9 |
SiC-based current limiter devices Chante JP, Tournier D, Planson D, Raynaud C, Lazar M, Locatelli ML, Brosselard P Materials Science Forum, 457-460, 951, 2004 |
| 10 |
High voltage (500V-14kV) 4H-SiC unipolar-bipolar Darlington transistors for high-power and high-temperature applications Zhao JH, Li X, Tone K, Alexandrov P, Fursin L, Carter J, Weiner M Materials Science Forum, 457-460, 957, 2004 |