검색결과 : 25건
| No. | Article |
|---|---|
| 1 |
Electric-field dependence of electron drift velocity in 4H-SiC Ivanov PA, Potapov AS, Samsonova TP, Grekhov IV Solid-State Electronics, 123, 15, 2016 |
| 2 |
Transient collector modulation of 4H-SiC BJTs during switch-on process Yuferev VS, Levinshtein ME, Ivanov PA, Zhang JQ, Palmour JW Solid-State Electronics, 123, 130, 2016 |
| 3 |
1/f noise in forward biased high voltage 4H-SiC Schottky diodes Shabunina EI, Levinshtein ME, Shmidt NM, Ivanov PA, Palmour JW Solid-State Electronics, 96, 44, 2014 |
| 4 |
Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse Levinshtein ME, Ivanov PA, Mnatsakanov TT, Palmour JW, Das MK, Hull BA Solid-State Electronics, 52(11), 1802, 2008 |
| 5 |
High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime Ivanov PA, Levinshtein ME, Palmour JW, Das MK, Hull BA Solid-State Electronics, 50(7-8), 1368, 2006 |
| 6 |
Steady-state and transient characteristics of high-voltage 4H-SiC junction diodes Ivanov PA, Levinshtein ME, Mnatsakanov TT, Palmour JW, Singh R, Irvin KG, Das M Materials Science Forum, 483, 973, 2005 |
| 7 |
On the homogeneity of the turn-on process in high-voltage 4H-SiC thyristors Levinshtein ME, Ivanov PA, Agarwal AK, Palmour JW Solid-State Electronics, 49(2), 233, 2005 |
| 8 |
High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes Levinshtein ME, Ivanov PA, Boltovets MS, Krivutsa VA, Palmour JW, Das MK, Hull BA Solid-State Electronics, 49(7), 1228, 2005 |
| 9 |
dV/dt effect in high-voltage (1.5 kV) 4H-SiC thyristors Yurkov SN, Mnatsakanov TT, Levinshtein ME, Ivanov PA, Agarwal AK, Palmour JW Solid-State Electronics, 49(12), 2011, 2005 |
| 10 |
Base current gain of power (1800 V, 10 A) 4H-SiC npn-BJTs Ivanov PA, Levinshtein ME, Agarwal AK, Palmour JW, Ryu SH Materials Science Forum, 457-460, 1145, 2004 |