검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects Lazar M, Raynaud C, Planson D, Locatelli ML, Isoird K, Ottaviani L, Chante JP, Nipoti R, Poggi A, Cardinali G Materials Science Forum, 389-3, 827, 2002 |
| 2 |
Study of 4H-SiC high-voltage bipolar diodes under reverse bias using electrical and OBIC characterization Isoird K, Lazar M, Locatelli ML, Raynaud C, Planson D, Chante JP Materials Science Forum, 389-3, 1289, 2002 |
| 3 |
Study of 6H-SiC high voltage bipolar diodes under reverse biases Isoird K, Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Chante JP Applied Surface Science, 184(1-4), 477, 2001 |
| 4 |
Study of the breakdown voltage of protected or non-protected 6H-SiC bipolar diodes by OBIC characterisation Isoird K, Ottaviani L, Locatelli ML, Planson D, Raynaud C, Bevilacqua P, Chante JP Materials Science Forum, 338-3, 1363, 2000 |