검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures Nakano Y, Irokawa Y, Sumida Y, Yagi S, Kawai H Electrochemical and Solid State Letters, 15(2), H44, 2012 |
| 2 |
pi-Conjugated polymer/GaN Schottky solar cells Matsuki N, Irokawa Y, Nakano Y, Sumiya M Solar Energy Materials and Solar Cells, 95(1), 284, 2011 |
| 3 |
Enhanced photocatalytic activity of TiO2-xNx loaded with copper ions under visible light irradiation Morikawa T, Irokawa Y, Ohwaki T Applied Catalysis A: General, 314(1), 123, 2006 |
| 4 |
Si+ ion implantation into GaN at cryogenic temperatures Irokawa Y, Fujishima O, Kachi T, Pearton SJ, Ren F Electrochemical and Solid State Letters, 8(4), G95, 2005 |
| 5 |
DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates Irokawa Y, Luo B, Ren F, Pan CC, Chen GT, Chyi JI, Park SS, Park YJ, Pearton SJ Electrochemical and Solid State Letters, 7(1), G8, 2004 |
| 6 |
Comparison of interface state density characterization methods for SiO2/4H-SiC MOS diodes LaRoche JR, Kim J, Johnson JW, Luo B, Kang BS, Mehandru R, Irokawa Y, Pearton SJ, Chung G, Ren F Electrochemical and Solid State Letters, 7(2), G21, 2004 |
| 7 |
4H-SiC Schottky diode array with 430 a forward current Kim J, Baik KH, Kang BS, Kim S, Irokawa Y, Ren F, Pearton SJ, Chung GY Electrochemical and Solid State Letters, 7(6), G125, 2004 |
| 8 |
Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates Irokawa Y, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ, Pan CC, Chen GT, Chyi JI, Park SS, Park YJ Electrochemical and Solid State Letters, 7(9), G188, 2004 |
| 9 |
Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates Kang BS, Ren F, Irokawa Y, Baik KW, Pearton SJ, Pan CC, Chen GT, Chyi JI, Ko HJ, Lee HY Journal of Vacuum Science & Technology B, 22(2), 710, 2004 |
| 10 |
2.6 A, 0.69 MW cm(-2) single-chip bulk GaN p-i-n rectifier Irokawa Y, Luo B, Kang BS, Kim J, LaRoche JR, Ren F, Baik KH, Pearton SJ, Pan CC, Chen GT, Chyi JI, Park SS, Park YJ Solid-State Electronics, 48(2), 359, 2004 |