| 1 |
Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)
Maeda Y, Narumi K, Sakai S, Terai Y, Hamaya K, Sadoh T, Miyao M
Thin Solid Films, 519(24), 8461, 2011 |
| 2 |
Effects of switching from < 1 1 0 > to < 1 0 0 > channel orientation and tensile stress on n-channel and p-channel metal-oxide-semiconductor transistors
Yang PZ, Lau WS, Lai SW, Lo VL, Siah SY, Chan L
Solid-State Electronics, 54(4), 461, 2010 |
| 3 |
Effect of oblique-angle deposition on early stage of Fe-Si growth
Harada H, Jomori S, Suzuki M, Kinoshita K, Nakajima K, Kimura K
Thin Solid Films, 515(22), 8277, 2007 |
| 4 |
Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy
Suzuki M, Kinoshita K, Jomori S, Harada H, Nakajima K, Kimura K
Thin Solid Films, 515(22), 8281, 2007 |
| 5 |
Studies of damage accumulation in 4H silicon carbide by ion-channeling techniques
Zhang Y, Gao F, Jiang W, McCready DE, Weber WJ
Materials Science Forum, 475-479, 1341, 2005 |
| 6 |
Formation of iron silicide on Si(001) studied by high resolution Rutherford backscattering spectroscopy
Kinoshita K, Imaizumi R, Nakajima K, Suzuki M, Kimura K
Thin Solid Films, 461(1), 131, 2004 |
| 7 |
Low-energy ion-beam induced effects in Al(100) surface studied using Rutherford backscattering and channeling
Ramana CV, Choi BS, Smith RJ
Applied Surface Science, 214(1-4), 338, 2003 |
| 8 |
Damage evolution and recovery in Al-implanted 4H-SiC
Zhang Y, Weber WJ, Jiang W, Hallen A, Possnert G
Materials Science Forum, 389-3, 815, 2002 |
| 9 |
Experimental and computer simulation studies of defects and ion-solid interactions in silicon carbide
Weber WJ, Gao F, Jiang WL, Devanathan R
Materials Science Forum, 389-3, 875, 2002 |
| 10 |
Scanning tunneling microscopy and ion channeling studies of thin Co films on bromine-treated Si(100) surfaces
Sekar K, Sundaravel B, Wilson IH, Heiland W
Applied Surface Science, 156(1-4), 161, 2000 |
