| 1 |
GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy
Jasik A, Sankowska I, Wawro A, Ratajczak J, Smoczynski D, Czuba K
Current Applied Physics, 19(4), 542, 2019 |
| 2 |
Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
Lu Q, Beanland R, Montesdeoca D, Carrington PJ, Marshall A, Krier A
Solar Energy Materials and Solar Cells, 191, 406, 2019 |
| 3 |
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
Ha MTH, Huynh SH, Do HB, Lee CT, Luc QH, Chang EY
Thin Solid Films, 669, 430, 2019 |
| 4 |
Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures
Aziz M, Mesli A, Felix JF, Jameel D, Al Saqri N, Taylor D, Henini M
Journal of Crystal Growth, 424, 5, 2015 |
| 5 |
Position dependant critical thickness in finite epitaxial systems
Kumar A, Subramaniam A
Applied Surface Science, 275, 60, 2013 |
| 6 |
Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III-V semiconductor materials
Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL
Journal of Crystal Growth, 303(2), 449, 2007 |
