| 1 |
Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method
Wang D, Nagatomi Y, Kojima S, Yamamoto K, Nakashima H
Thin Solid Films, 557, 288, 2014 |
| 2 |
Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
Kumar AA, Rao LD, Reddy VR, Choi CJ
Current Applied Physics, 13(6), 975, 2013 |
| 3 |
The effect of series resistance and interface states on the frequency dependent C-V and G/w-V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes
Zeyrek S, Acaroglu E, Altindal S, Birdogan S, Bubul MM
Current Applied Physics, 13(7), 1225, 2013 |
| 4 |
Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering
Hirayama K, Yoshino K, Ueno R, Iwamura Y, Yang HG, Wang D, Nakashima H
Solid-State Electronics, 60(1), 122, 2011 |
