1 |
Formation of atomically flat hydroxyl-terminated diamond (111) surfaces via water vapor annealing Yoshida R, Miyata D, Makino T, Yamasaki S, Matsumoto T, Inokuma T, Tokuda N Applied Surface Science, 458, 222, 2018 |
2 |
Mechanism of anisotropic etching on diamond (111) surfaces by a hydrogen plasma treatment Kuroshima H, Makino T, Yamasaki S, Matsumoto T, Inokuma T, Tokuda N Applied Surface Science, 422, 452, 2017 |
3 |
Self-separation of freestanding diamond films using graphite interlayers precipitated from C-dissolved Ni substrates Ito S, Nagai M, Matsumoto T, Inokuma T, Tokuda N Journal of Crystal Growth, 470, 104, 2017 |
4 |
Morphological, luminescence and structural properties of nanocrystalline silicon thin films Ali AM, Kobayashi H, Inokuma T, Al-Hajry A Materials Research Bulletin, 48(3), 1027, 2013 |
5 |
Structural and photo-luminescence properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced chemical vapor deposition Ali AM, Inokuma T, Hasegawa S Applied Surface Science, 253(3), 1198, 2006 |
6 |
Thiourea-catalyzed asymmetric Michael addition of activated methylene compounds to alpha,beta-unsaturated imides: Dual activation of imide by intra- and intermolecular hydrogen bonding Inokuma T, Hoashi Y, Takemoto Y Journal of the American Chemical Society, 128(29), 9413, 2006 |
7 |
Temperature dependence of the structural properties of amorphous silicon oxynitride layers Abu El-Oyoun M, Inokuma T, Kurata Y, Hasegawa S Solid-State Electronics, 47(10), 1669, 2003 |
8 |
Defects in silicon oxynitride films Futatsudera M, Kimura T, Matsumoto A, Inokuma T, Kurata Y, Hasegawa S Thin Solid Films, 424(1), 148, 2003 |
9 |
Optical properties of silicon nanocrystallites in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition Milovzorov DE, Ali AM, Inokuma T, Kurata Y, Suzuki T, Hasegawa S Thin Solid Films, 382(1-2), 47, 2001 |
10 |
Structure of polycrystalline silicon films deposited at low temperature by plasma CVD on substrates exposed to different plasma Moniruzzaman S, Inokuma T, Kurata Y, Takenaka S, Hasegawa S Thin Solid Films, 337(1-2), 27, 1999 |