검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Growth of self-assembled InGaN quantum dots on Si (111) at reduced temperature by molecular beam epitaxy Chin CW, Hassan Z, Yam FK, Ahmad MA Thin Solid Films, 544, 33, 2013 |
| 2 |
Growth and optical characterisation of multilayers of InGaN quantum dots Zhu TT, El-Ella HAR, Reid B, Holmes MJ, Taylor RA, Kappers MJ, Oliver RA Journal of Crystal Growth, 338(1), 262, 2012 |
| 3 |
InGaN super-lattice growth for fabrication of quantum dot containing microdisks El-Ella HAR, Rol F, Collins DP, Kappers MJ, Taylor RA, Hu EL, Oliver RA Journal of Crystal Growth, 321(1), 113, 2011 |
| 4 |
유기금속기상증착법에 의한 InGaN/GaN 양자점 구조의 성장거동 정우광, 장재민, 최승규, 김진열 Korean Journal of Materials Research, 18(10), 535, 2008 |
| 5 |
InGaN quantum dot photodetectors Ji LW, Su YK, Chang SJ, Liu SH, Wang CK, Tsai ST, Fang TH, Wu LW, Xue QK Solid-State Electronics, 47(10), 1753, 2003 |
| 6 |
Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images Tachibana K, Someya T, Ishida S, Arakawa Y Journal of Crystal Growth, 221, 576, 2000 |
| 7 |
Resonant Raman scattering and the emission process in zincblende-InxGa1-xN Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Frey T, As DJ, Schikora D, Lischka K Materials Science Forum, 338-3, 1595, 2000 |
| 8 |
MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization Dalmasso S, Damilano B, Grandjean N, Massies J, Leroux M, Reverchon JL, Duboz JY Thin Solid Films, 380(1-2), 195, 2000 |