| 1 |
Axial heterostructure of Au-catalyzed InGaAs/GaAs nanowires grown by metal-organic chemical vapor deposition
Yuan HB, Li L, Li ZJ, Wang Y, Qu Y, Ma XH, Liu GJ
Chemical Physics Letters, 692, 28, 2018 |
| 2 |
3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters
Alim MA, Rezazadeh AA
Solid-State Electronics, 132, 24, 2017 |
| 3 |
Growth and temperature dependent photoluminescence of InGaAs quantum dot chains
Yang H, Kim DJ, Colton JS, Park T, Meyer D, Jones AM, Thalman S, Smith D, Clark K, Brown S
Applied Surface Science, 296, 8, 2014 |
| 4 |
Formation of In0.5Ga0.5As ring-and-hole structure by droplet molecular beam epitaxy
Pankaow N, Panyakeow S, Ratanathammaphan S
Journal of Crystal Growth, 311(7), 1832, 2009 |
| 5 |
Thermal analysis of asymmetric intracavity-contacted oxide-aperture VCSELs for efficient heat dissipation
Lee HK, Song YM, Lee YT, Yu JS
Solid-State Electronics, 53(10), 1086, 2009 |
| 6 |
Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots
Lee JI, Nam HD, Choi WJ, Yu BY, Song JD, Hong SC, Noh SK, Chovet A
Current Applied Physics, 6(6), 1024, 2006 |
| 7 |
Growth of highly strained InGaAs quantum wells on GaAs substrates -effect of growth rate
Tan HH, Lever P, Jagadish C
Journal of Crystal Growth, 274(1-2), 85, 2005 |
| 8 |
Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy
Niu ZC, Ni HQ, Xu XH, Xu YQ, He ZH, Han Q, Wu RH
Journal of Crystal Growth, 278(1-4), 728, 2005 |
| 9 |
Electrical properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure
Tsai JH, Zhu KP
Materials Chemistry and Physics, 82(3), 501, 2003 |
| 10 |
In0.5Ga0.5P/In0.22Ga0.78As pseudomorphic high electron mobility transistors with an oxidized GaAs gate for improved breakdown voltage characteristics
Lee JW, Kang IH, Kang SJ, Jo SJ, In SK, Song HJ, Song JI
Solid-State Electronics, 47(2), 223, 2003 |
