화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Demonstration of the operation principles of intermediate band solar cells at room temperature
Lopez E, Datas A, Ramiro I, Linares PG, Antolin E, Artacho I, Marti A, Luque A, Shoji Y, Sogabe T, Ogura A, Okada Y
Solar Energy Materials and Solar Cells, 149, 15, 2016
2 High-efficient carbon-doped InGaAs/AlGaAs/GaAs quantum well lasers
Li HX, Reinhardt F, Birch L, Bradford G
Journal of Crystal Growth, 263(1-4), 181, 2004
3 Carbon auto-doped AlGaAs/GaAs quantum well lasers
Li HX, Reinhardt F, Macomber S
Journal of Crystal Growth, 256(1-2), 52, 2003
4 Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (001) surfaces of III-V compound semiconductors
Kasai S, Negoro N, Hasegawa H
Applied Surface Science, 175, 255, 2001
5 Comments on the appearance of''mirror'' peaks in mobility spectrum analysis of semiconducting devices
Achard J, Varenne-Guillot C, Barbarin F, Dugay M
Applied Surface Science, 158(3-4), 345, 2000
6 Photo-Hall Studies of Modulation-Doped Field-Effect Transistors with Short-Period Superlattice Channels Rather Than Alloy Channels
Moreira MV, Deoliveira AG, Py MA
Journal of Vacuum Science & Technology B, 14(5), 3350, 1996
7 Higher Mobility of Charge-Carriers in InAs/GaAs Superlattices Through the Elimination of InGaAs Alloy Disorders on GaAs
Moreira MV, Deoliveira AG, Py MA
Journal of Vacuum Science & Technology B, 13(5), 2064, 1995