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| No. | Article |
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| 1 |
Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD Liu X, Song H, Miao GQ, Jiang H, Cao LZ, Li DB, Sun XJ, Chen YR Applied Surface Science, 257(6), 1996, 2011 |