화학공학소재연구정보센터
검색결과 : 18건
No. Article
1 Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides
Hara KO, Du WJ, Arimoto K, Yamanaka J, Nakagawa K, Toko K, Suemasu T, Usami N
Thin Solid Films, 603, 218, 2016
2 Tungsten-based nanomaterials (WO3 & Bi2WO6): Modifications related to charge carrier transfer mechanisms and photocatalytic applications
Kumar SG, Rao KSRK
Applied Surface Science, 355, 939, 2015
3 Visible light photocatalysis of fullerol-complexed TiO2 enhanced by Nb doping
Lim J, Monllor-Satoca D, Jang JS, Lee S, Choi W
Applied Catalysis B: Environmental, 152, 233, 2014
4 Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
Khan MA, Hara KO, Nakamura K, Du WJ, Baba M, Toh K, Suzuno M, Toko K, Usami N, Suemasu T
Journal of Crystal Growth, 378, 201, 2013
5 Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation
Hara KO, Hoshi Y, Usami N, Shiraki Y, Nakamura K, Toko K, Suemasu T
Thin Solid Films, 534, 470, 2013
6 In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates
Shimura Y, Takeuchi S, Nakatsuka O, Vincent B, Gencarelli F, Clarysse T, Vandervorst W, Caymax M, Loo R, Jensen A, Petersen DH, Zaima S
Thin Solid Films, 520(8), 3206, 2012
7 Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy
Khan MA, Saito T, Nakamura K, Baba M, Du W, Toh K, Toko K, Suemasu T
Thin Solid Films, 522, 95, 2012
8 Extremely low recombination velocity on crystalline silicon surfaces realized by low-temperature impurity doping in Cat-CVD technology
Hayakawa T, Miyamoto M, Koyama K, Ohdaira K, Matsumura H
Thin Solid Films, 519(14), 4466, 2011
9 Enhancement of the Hole Injection and Hole Transport in Organic Light Emitting Devices Utilizing a 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyano-quinodimethane Doped Hole Transport Layer
Baek SH, Kim CU, Choo DC, Kim TW, Park JH, Seo JH, Kim YK
Molecular Crystals and Liquid Crystals, 498, 258, 2009
10 The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics
Ohno T, Oyama Y, Nishizawa JI
Applied Surface Science, 252(19), 7283, 2006