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Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides Hara KO, Du WJ, Arimoto K, Yamanaka J, Nakagawa K, Toko K, Suemasu T, Usami N Thin Solid Films, 603, 218, 2016 |
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Tungsten-based nanomaterials (WO3 & Bi2WO6): Modifications related to charge carrier transfer mechanisms and photocatalytic applications Kumar SG, Rao KSRK Applied Surface Science, 355, 939, 2015 |
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Visible light photocatalysis of fullerol-complexed TiO2 enhanced by Nb doping Lim J, Monllor-Satoca D, Jang JS, Lee S, Choi W Applied Catalysis B: Environmental, 152, 233, 2014 |
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Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells Khan MA, Hara KO, Nakamura K, Du WJ, Baba M, Toh K, Suzuno M, Toko K, Usami N, Suemasu T Journal of Crystal Growth, 378, 201, 2013 |
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Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation Hara KO, Hoshi Y, Usami N, Shiraki Y, Nakamura K, Toko K, Suemasu T Thin Solid Films, 534, 470, 2013 |
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In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates Shimura Y, Takeuchi S, Nakatsuka O, Vincent B, Gencarelli F, Clarysse T, Vandervorst W, Caymax M, Loo R, Jensen A, Petersen DH, Zaima S Thin Solid Films, 520(8), 3206, 2012 |
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Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy Khan MA, Saito T, Nakamura K, Baba M, Du W, Toh K, Toko K, Suemasu T Thin Solid Films, 522, 95, 2012 |
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Extremely low recombination velocity on crystalline silicon surfaces realized by low-temperature impurity doping in Cat-CVD technology Hayakawa T, Miyamoto M, Koyama K, Ohdaira K, Matsumura H Thin Solid Films, 519(14), 4466, 2011 |
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Enhancement of the Hole Injection and Hole Transport in Organic Light Emitting Devices Utilizing a 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyano-quinodimethane Doped Hole Transport Layer Baek SH, Kim CU, Choo DC, Kim TW, Park JH, Seo JH, Kim YK Molecular Crystals and Liquid Crystals, 498, 258, 2009 |
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The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics Ohno T, Oyama Y, Nishizawa JI Applied Surface Science, 252(19), 7283, 2006 |