검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
수전해 시스템에 적용 가능한 전해질막 연구 개발 동향 임광섭, 손태양, 김기현, 김정, 남상용 Applied Chemistry for Engineering, 30(4), 389, 2019 |
| 2 |
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs Grill A, Stampfer B, Im KS, Lee JH, Ostermaier C, Ceric H, Waltl M, Grasser T Solid-State Electronics, 156, 41, 2019 |
| 3 |
Low voltage operation of GaN vertical nanowire MOSFET Son DH, Lee JH, Kim JG, Im KS, Lee JH Solid-State Electronics, 155, 76, 2019 |
| 4 |
Low voltage operation of GaN vertical nanowire MOSFET Son DH, Jo YW, Seo JH, Won CH, Im KS, Lee YS, Jang HS, Kim DH, Kang IM, Lee JH Solid-State Electronics, 145, 1, 2018 |
| 5 |
Performance enhancement of AlGaN/GaN nanochannel omega-FinFET Im KS, Seo JH, Vodapally S, Kang IM, Lee JH, Cristoloveanu S, Lee JH Solid-State Electronics, 129, 196, 2017 |
| 6 |
Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer Im KS, Won CH, Vodapally S, Son DH, Jo YW, Park Y, Lee JH, Lee JH Journal of Crystal Growth, 441, 41, 2016 |
| 7 |
Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel Im KS, Kang HS, Kim DK, Vodapally S, Park Y, Lee JH, Kim YT, Cristoloveanu S, Lee JH Solid-State Electronics, 120, 47, 2016 |
| 8 |
Characteristics of GaN and AlGaN/GaN FinFETs Im KS, Kang HS, Lee JH, Chang SJ, Cristoloveanu S, Bawedin M, Lee JH Solid-State Electronics, 97, 66, 2014 |
| 9 |
Performance improvement of normally off AlGaN/GaN FinFETs with fully gate-covered nanochannel Im KS, Son DH, Ahn HK, Bae SB, Mun JK, Nam ES, Cristoloveanu S, Lee JH Solid-State Electronics, 89, 124, 2013 |
| 10 |
Normally-off GaN MOSFETs on insulating substrate Kim DS, Im KS, Kim KW, Kang HS, Kim DK, Chang SJ, Bae Y, Hahm SH, Cristoloveanu S, Lee JH Solid-State Electronics, 90, 79, 2013 |