검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Determination of silicon oxide layer thickness by time-of-flight secondary ion mass spectroscopy Brox O, Iltgen K, Hellweg S, Benninghoven A Journal of Vacuum Science & Technology B, 17(5), 2191, 1999 |
| 2 |
Ultrashallow secondary ion mass spectroscopy depth profiling of doping spikes and Si/SiGe/Si heterostructures using different primary species Kruger D, Iltgen K, Heinemann B, Kurps R, Benninghoven A Journal of Vacuum Science & Technology B, 16(1), 292, 1998 |
| 3 |
Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants : Problems and solutions van Berkum JGM, Collart EJH, Weemers K, Gravesteijn DJ, Iltgen K, Benninghoven A, Niehuis E Journal of Vacuum Science & Technology B, 16(1), 298, 1998 |
| 4 |
Optimized Time-of-Flight Secondary-Ion Mass-Spectroscopy Depth Profiling with a Dual-Beam Technique Iltgen K, Bendel C, Benninghoven A, Niehuis E Journal of Vacuum Science & Technology A, 15(3), 460, 1997 |