검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties Papadomanolaki E, Bazioti C, Kazazis SA, Androulidaki M, Dimitrakopulos GP, Iliopoulos E Journal of Crystal Growth, 437, 20, 2016 |
| 2 |
Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires Eftychis S, Kruse J, Koukoula T, Kehagias T, Komninou P, Adikimenakis A, Tsagaraki K, Androulidaki M, Tzanetakis P, Iliopoulos E, Georgakilas A Journal of Crystal Growth, 442, 8, 2016 |
| 3 |
Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates Kazazis SA, Papadomanolaki E, Androulidaki M, Tsagaraki K, Kostopoulos A, Aperathitis E, Iliopoulos E Thin Solid Films, 611, 46, 2016 |
| 4 |
Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE Adikimenakis A, Sahonta SL, Dimitrakopulos GP, Domagala J, Kehagias T, Komninou P, Iliopoulos E, Georgakilas A Journal of Crystal Growth, 311(7), 2010, 2009 |
| 5 |
InN films and nanostructures grown on Si (111) by RF-MBE Ajagunna AO, Adikimenakis A, Iliopoulos E, Tsagaraki K, Androulidaki M, Georgakilas A Journal of Crystal Growth, 311(7), 2058, 2009 |
| 6 |
The effect of nitrogen on the properties of zinc nitride thin films and their conversion into p-ZnO : N films Kambilafka V, Voulgaropoulou P, Dounis S, Iliopoulos E, Androulidaki M, Tsagaraki K, Saly V, Ruzinsky M, Prokein P, Aperathitis E Thin Solid Films, 515(24), 8573, 2007 |
| 7 |
Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering Koufaki M, Sifakis M, Iliopoulos E, Pelekanos N, Modreanu A, Cimalla V, Ecke G, Aperathitis E Applied Surface Science, 253(1), 405, 2006 |
| 8 |
Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001) Dimakis E, Tsagaraki K, Iliopoulos E, Komninou P, Kehagias T, Delimitis A, Georgakilas A Journal of Crystal Growth, 278(1-4), 367, 2005 |
| 9 |
Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth Iliopoulos E, Adikimenakis A, Dimakis E, Tsagaraki K, Konstantinidis G, Georgakilas A Journal of Crystal Growth, 278(1-4), 426, 2005 |
| 10 |
High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors Bhattacharyya A, Iyer S, Iliopoulos E, Sampath AV, Cabalu J, Moustakas TD, Friel I Journal of Vacuum Science & Technology B, 20(3), 1229, 2002 |