검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
Cross-sectional transmission electron microscope observation of Si clathrate thin films grown on Si (111) substrates Sakai K, Takeshita H, Haraguchi T, Suzuki H, Ohashi F, Kume T, Fukuyama A, Nonomura S, Ikari T Thin Solid Films, 621, 32, 2017 |
| 2 |
Involvement of the T-box transcription factor Brachyury in early-stage embryonic mouse salivary gland Hayashi K, Ikari T, Sugiyama G, Sugiura T, Ohyama Y, Kumamaru W, Shirasuna K, Mori Y Biochemical and Biophysical Research Communications, 477(4), 814, 2016 |
| 3 |
Thin film of guest-free type-II silicon clathrate on Si(111) wafer Kume T, Ohashi F, Sakai K, Fukuyama A, Imai M, Udono H, Ban T, Habuchi H, Suzuki H, Ikari T, Sasaki S, Nonomura S Thin Solid Films, 609, 30, 2016 |
| 4 |
Effects of nitrogen precursor on the Au-assisted vapor-liquid-solid growth of GaAs(N) nanostructures Suzuki H, Sakai K, Haraguchi T, Yamauchi T, Hijii M, Maeda K, Ikari T Journal of Crystal Growth, 386, 100, 2014 |
| 5 |
Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate Suzuki H, Ito D, Fukuyama A, Ikari T Journal of Crystal Growth, 380, 148, 2013 |
| 6 |
Nitrogen-induced localized level observed by photoreflectance in GaAsN thin films grown by chemical beam epitaxy Suzuki H, Suzuki A, Fukuyama A, Ikari T Journal of Crystal Growth, 384, 5, 2013 |
| 7 |
Effects of gas-flow sequences on the self-limiting mechanisms of GaAsN films grown by atomic layer epitaxy Suzuki H, Sadato H, Haraguchi T, Yamauchi T, Ozeki M, Ikari T Thin Solid Films, 540, 79, 2013 |
| 8 |
Effect of the molecular weight of a polyethylene glycol on the photoluminescence spectra of porous TiO2 films for dye-sensitized solar cells Sakai K, Hirashita Y, Aihara T, Fukuyama A, Ikari T, Kukita K, Furukawa S Thin Solid Films, 519(17), 5760, 2011 |
| 9 |
Adsorption of cobalt phthalocyanine on a Si(100) surface with Bi-line structures as evaluated by scanning tunneling microscopy Ikari T, Tanaka S, Nakamura S, Naitoh M, Nishigaki S, Shoji F Applied Surface Science, 256(4), 1132, 2009 |
| 10 |
Growth of In-rich InGaN films on sapphire via GaN layer by RF-MBE Komaki H, Nakamura T, Katayama R, Onabe K, Ozeki M, Ikari T Journal of Crystal Growth, 301, 473, 2007 |