검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory Ambrogio S, Balatti S, Choi S, Ielmini D Advanced Materials, 26(23), 3885, 2014 |
| 2 |
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament Balatti S, Larentis S, Gilmer DC, Ielmini D Advanced Materials, 25(10), 1474, 2013 |
| 3 |
Logic Computation in Phase Change Materials by Threshold and Memory Switching Cassinerio M, Ciocchini N, Ielmini D Advanced Materials, 25(41), 5975, 2013 |
| 4 |
Unified physical modeling of reliability mechanisms and scaling perspective of phase change memory Ielmini D Current Applied Physics, 11(2), E85, 2011 |
| 5 |
Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories Boniardi M, Ielmini D, Tortorelli I, Redaelli A, Pirovano A, Allegra M, Magistretti M, Bresolin C, Erbetta D, Modelli A, Varesi E, Pellizzer F, Lacaita AL, Bez R Solid-State Electronics, 58(1), 11, 2011 |
| 6 |
Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memories Nardi F, Ielmini D, Cagli C, Spiga S, Fanciulli M, Goux L, Wouters DJ Solid-State Electronics, 58(1), 42, 2011 |
| 7 |
Phase Change Materials and Their Application to Nonvolatile Memories Raoux S, Welnic W, Ielmini D Chemical Reviews, 110(1), 240, 2010 |
| 8 |
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics Mantegazza D, Ielmini D, Pirovano A, Lacaita AL, Varesi E, Pellizzer F, Bez R Solid-State Electronics, 52(4), 584, 2008 |
| 9 |
Status and challenges of phase change memory modeling Lacaita AL, Ielmini D, Mantegazza D Solid-State Electronics, 52(9), 1443, 2008 |
| 10 |
Switching and programming dynamics in phase-change memory cells Ielmini D, Mantegazza D, Lacaita AL, Pirovano A, Pellizzer F Solid-State Electronics, 49(11), 1826, 2005 |