검색결과 : 11건
No. | Article |
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1 |
Discussion of the importance of the refraction effects for RHEED Mitura Z, Szczypinski MM, Mitura S Applied Surface Science, 421, 247, 2017 |
2 |
Properties of lattice matched ZnMgSeTe quaternary alloys grown on ZnTe substrates Chang JH, Cho MW, Makino H, Shim K, Rabitz H, Yao T Journal of Crystal Growth, 214, 373, 2000 |
3 |
Reflection high-energy electron diffraction oscillations on rotating substrates Braun W, Moller H, Johnson SR, Zhang YH Journal of Vacuum Science & Technology B, 17(2), 474, 1999 |
4 |
Onset of oscillations during growth on a vicinal surface Harris S Journal of Vacuum Science & Technology A, 16(4), 2367, 1998 |
5 |
Monte-Carlo simulation of Ge on Si(111) MBE growth : analysis of percolative structure Daniluk A, Mazurek P, Paprocki K, Mikolajczak P Thin Solid Films, 306(2), 220, 1997 |
6 |
Surface processes and phase diagrams in MBE growth of Si/Ge heterostructure Pchelyakov OP, Markov VA, Nikiforov AI, Sokolov LV Thin Solid Films, 306(2), 299, 1997 |
7 |
Different Growth Modes in GaAs(110) Homoepitaxy Holmes DM, Belk JG, Sudijono JL, Neave JH, Jones TS, Joyce BA Journal of Vacuum Science & Technology A, 14(3), 849, 1996 |
8 |
Chemistry of Arsenic Incorporation During GaAs/GaAs(100) Molecular-Beam Epitaxy Probed by Simultaneous Laser Flux Monitoring and Reflection High-Energy Electron-Diffraction Ott AK, Casey SM, Alstrin AL, Leone SR Journal of Vacuum Science & Technology B, 14(4), 2742, 1996 |
9 |
First-Principles Calculations of Surface-Adsorption and Migration on GaAs-Surfaces Shiraishi K Thin Solid Films, 272(2), 345, 1996 |
10 |
Low-Temperature Growth and Characterization of GaAs Epitaxial Layer on (111)B GaAs Substrates Kim GH, Gray JL, Yoo HM, Ohuchi FS Journal of Vacuum Science & Technology B, 12(2), 1059, 1994 |