| 1 |
Degradation of up-grown metamorphic InGaP/InGaAs/Ge solar cells by low-energy proton irradiation
Guo HL, Shi LF, Sun Q, Zhang QM, Wu YY, Xiao JD, Guo B, Zhang YQ
Solar Energy Materials and Solar Cells, 191, 399, 2019 |
| 2 |
InGaP/InGaAs field-effect transistor typed hydrogen sensor
Tsai JH, Liou SH, Lin PS, Chen YC
Applied Surface Science, 432, 224, 2018 |
| 3 |
Low light illumination study on commercially available homojunction photovoltaic cells
Russo J, Ray W, Litz MS
Applied Energy, 191, 10, 2017 |
| 4 |
Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell
Huang TH, Lo H, Lo C, Wu MC, Lour WS
Solid-State Electronics, 126, 109, 2016 |
| 5 |
Performance enhancement of III-V multi-junction solar cells using indium-tin-oxide electrodes
Kao YC, Ou SL, Wu FL, Horng RH
Thin Solid Films, 612, 36, 2016 |
| 6 |
Characteristics of Germanium n(+)/p junctions formed by phosphorus diffusion from on indium-gallium-phosphide layer
Baek JW, Shim J, Park JH
Current Applied Physics, 15(7), 765, 2015 |
| 7 |
Nanostructured encapsulation coverglasses with wide-angle broadband antireflection and self-cleaning properties for III-V multi-junction solar cell applications
Leem JW, Yu JS, Heo J, Park WK, Park JH, Cho WJ, Kim DE
Solar Energy Materials and Solar Cells, 120, 555, 2014 |
| 8 |
Ordering InGaP epilayer directly grown on Ge substrate
Wu HM, Tsai SJ, Chang YC, Chen YR, Lin HH
Thin Solid Films, 570, 390, 2014 |
| 9 |
Quantification of InxGa1-xP composition modulation by nanometric scale HAADF simulations
Pastore CE, Gutierrez M, Araujo D, Rodriguez-Messmer E
Applied Surface Science, 269, 138, 2013 |
| 10 |
Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection
Nallatamby JC, Abdelhadi K, Jacquet JC, Prigent M, Floriot D, Delage S, Obregon J
Solid-State Electronics, 81, 35, 2013 |
