화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Characteristics of electron traps in Si-doped Ga0.51In0.49P and electrical properties of modulation doped GaInP/InGaAs/GaAs heterostructures
Besikci C, Civan Y
Thin Solid Films, 338(1-2), 213, 1999
2 High density plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors
Lee JW, Pearton SJ, Ren F, Kopf RF, Kuo JM, Shul RJ, Constantine C, Johnson D
Journal of the Electrochemical Society, 145(11), 4036, 1998
3 Dry-Etching of InGaP in Magnetron Enhanced BCl3 Plasmas
Mclane GF, Wood MC, Eckart DW, Lee JW, Lee KN, Pearton SJ, Abernathy CR
Journal of Vacuum Science & Technology A, 15(3), 622, 1997
4 Wet Chemical Etch Solutions for AlxGa1-Xp
Lee JW, Santana CJ, Abernathy CR, Pearton SJ, Ren F
Journal of the Electrochemical Society, 143(1), L1, 1996
5 High Ion Density Plasma-Etching of InGaP, Alinp, and AlGaP in CH4/H-2/Ar
Lee JW, Pearton SJ, Santana CJ, Mileham JR, Lambers ES, Abernathy CR, Ren F, Hobson WS
Journal of the Electrochemical Society, 143(3), 1093, 1996
6 Optimizing the Reactive Ion Etching of P-InGaP with CH4/H-2 by a 2-Level Fractional Factorial Design Process
Chan RH, Cheng KY
Journal of Vacuum Science & Technology B, 14(5), 3219, 1996
7 Dry-Etching of InGaP and Alinp in CH4/H-2/Ar
Lee JW, Pearton SJ, Santana CJ, Lambers ES, Abernathy CR, Hobson WS, Ren F
Plasma Chemistry and Plasma Processing, 16(3), 365, 1996
8 Wet Chemical Etching of Al0.5In0.5P
Lee JW, Pearton SJ, Abernathy CR, Hobson WS, Ren F, Wu CS
Journal of the Electrochemical Society, 142(6), L100, 1995