화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Structural and optical properties of Gd implanted GaN with various crystallographic orientations
Mackova A, Malinsky P, Jagerova A, Sofer Z, Klimova K, Sedmidubsky D, Pristovsek M, Mikulics M, Lorincik J, Bottger R, Akhmadaliev S
Thin Solid Films, 638, 63, 2017
2 Evidences of defect contribution in magnetically ordered Sm-implanted GaN
Lo FY, Guo JY, Huang CD, Chou KC, Liu HL, Ney V, Ney A, Chern MY, Shvarkov S, Reuter D, Wieck AD, Pezzagna S, Massies J
Current Applied Physics, 14, S7, 2014
3 Synthesis, structure, and molecular orbital studies of yttrium, erbium, and lutetium complexes bearing eta(2)-pyrazolato ligands: Development of a new class of precursors for doping semiconductors
Pfeiffer D, Ximba BJ, Liable-Sands LM, Rheingold AL, Heeg MJ, Coleman DM, Sehlegel HB, Kuech TF, Winter CH
Inorganic Chemistry, 38(20), 4539, 1999
4 Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces
Levin TM, Young AP, Schafer J, Brillson LJ, MacKenzie JD, Abernathy CR
Journal of Vacuum Science & Technology A, 17(6), 3437, 1999
5 Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates
Birkhahn R, Hudgins R, Lee D, Steckl AJ, Molnar RJ, Saleh A, Zavada JM
Journal of Vacuum Science & Technology B, 17(3), 1195, 1999