화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Effects of Growth Rate and III/V Ratio on Properties of AlN Films Grown on c-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy
Lim SH, Shin EJ, Lee HS, Han SK, Le DD, Hong SK
Korean Journal of Materials Research, 29(10), 579, 2019
2 Laser-induced reactive epitaxy of binary and ternary group III nitride heterostructures
Rupp T, Henn G, Schroder H
Applied Surface Science, 186(1-4), 429, 2002