검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
High-temperature isothermal capacitance transient spectroscopy study on SiN deposition damages for low-Mg-doped p-GaN Schottky diodes Shiojima K, Wakayama H, Aoki T, Kaneda N, Nomoto K, Mishima T Thin Solid Films, 557, 268, 2014 |
| 2 |
Electrical behavior of implanted aluminum and boron near tall region in 4H-SiC after high-temperature annealing Negoro Y, Kimoto T, Matsunami H Materials Science Forum, 483, 617, 2005 |
| 3 |
Deep levels in silicon carbide Schottky diodes Castaldini A, Cavallini A, Polenta L, Nava F, Canali C, Lanzieri C Applied Surface Science, 187(3-4), 248, 2002 |
| 4 |
ICTS measurements for p-GaN Schottky contacts Shiojima K, Sugitani S, Sakai S Applied Surface Science, 190(1-4), 318, 2002 |
| 5 |
Fast growth and doping characteristics of alpha-SiC in horizontal cold-wall chemical vapor deposition Nakamura S, Kimoto T, Matsunami H Materials Science Forum, 389-3, 183, 2002 |
| 6 |
Ion-implantation induced deep levels in SiC studied by isothermal capacitance transient spectroscopy (ICTS) Ono R, Fujimaki M, Senzaki J, Tanimoto S, Shinohe T, Okushi H, Arai K Materials Science Forum, 389-3, 847, 2002 |
| 7 |
Distribution profile of deep levels in SiC observed by isothermal capacitance transient spectroscopy Fujimaki M, Ono R, Kushibe M, Masahara K, Kojima K, Shinohe T, Okushi H, Arai K Materials Science Forum, 389-3, 851, 2002 |
| 8 |
Breakdown electric field in 4H-SiC epitaxial layer grown on various net-doping substrates Ono R, Fujimaki M, Hon-Joo N, Tanimoto S, Shinohe T, Yatsuo T, Okushi H, Arai K Materials Science Forum, 433-4, 435, 2002 |
| 9 |
Sensitivity of contactless transient spectroscopy and actual measurement of localized states in oxidized Si wafer Yoshida H, Nakanishi R, Kishino S Journal of Crystal Growth, 210(1-3), 379, 2000 |
| 10 |
Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy Kawahara T, Ohbuchi Y, Tabuchi N, Morimoto J, Goto H, Ido T Journal of Crystal Growth, 221, 398, 2000 |