| 1 |
Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films
Alcinkaya B, Sel K
Solid-State Electronics, 139, 109, 2018 |
| 2 |
The influence of methane flow rate on microstructure and surface morphology of a-SiC:H thin films prepared by plasma enhanced chemical vapor deposition technique
Jiang LH, Tan XY, Xiao T, Xiang P
Thin Solid Films, 622, 71, 2017 |
| 3 |
Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVD
Gunes I, Sel K
Thin Solid Films, 636, 85, 2017 |
| 4 |
High temperature annealing effects on the chemical and mechanical properties of inductively-coupled plasma-enhanced chemical vapor deposited a-SiC:H thin films
Frischmuth T, Schneider M, Maurer D, Grille T, Schmid U
Thin Solid Films, 611, 6, 2016 |
| 5 |
Low temperature deposition of a-SiC:H thin films applying a dual plasma source process
Frischmuth T, Schneider M, Radovic IB, Siketic Z, Maurer D, Grille T, Schmid U
Thin Solid Films, 616, 164, 2016 |
| 6 |
Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films
Sel K, Gunes I
Thin Solid Films, 520(24), 7062, 2012 |
| 7 |
Comparative study of annealing and oxidation effects in a-SiC:H and a-SiC thin films deposited by radio-frequency magnetron sputtering
Vasin AV, Muto S, Ishikawa Y, Rusavsky AV, Kimura T, Lysenko VS, Nazarov AN
Thin Solid Films, 519(7), 2218, 2011 |
| 8 |
Strong dependence of IR absorption in a-SiC : H dc magnetron sputtered thin films on H-2 partial pressure
Stamate MD
Applied Surface Science, 172(1-2), 47, 2001 |
| 9 |
High temperature annealing of hydrogenated amorphous silicon carbide thin films
Wang YH, Lin JY, Huan CHA, Feng ZC, Chua SJ
Thin Solid Films, 384(2), 173, 2001 |
