1 |
A comparative study of CF4, Cl-2 and HBr + Ar inductively coupled plasmas for dry etching applications Efremov A, Lee J, Kwon KH Thin Solid Films, 629, 39, 2017 |
2 |
Re-manufacture of cobalt-manganese-bromide as a liquid catalyst from spent catalyst containing cobalt generated from petrochemical processes via hydrometallurgy Joo SH, Shin DJ, Oh CH, Wang JP, Shin SM Journal of Hazardous Materials, 318, 24, 2016 |
3 |
Use of NH3 etchant for voids suppression to enhance set cycles in CGeSbTe-based phase change memory devices Park JH, Kim JH, Ko DH, Wu Z, Ahn DH, Park SO, Hwang KH Thin Solid Films, 616, 502, 2016 |
4 |
Effect of chemical surface treatments on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 films on Ge substrates Li XF, Li AD, Liu XJ, Gong Y, Chen XC, Li H, Wu D Applied Surface Science, 257(10), 4589, 2011 |
5 |
Effect of halogens on mercury conversion in SCR catalysts Eswaran S, Stenger HG Fuel Processing Technology, 89(11), 1153, 2008 |
6 |
Hydrogen bromide plasma-copper reaction in a new copper etching process Lee S, Kuo Y Thin Solid Films, 457(2), 326, 2004 |
7 |
Temperature Coefficients of the Rate of Cl Atom Reaction with HBr in the 228-368 K Range at Millitorr Pressures Dobis O, Benson SW Journal of Physical Chemistry A, 101(7), 1305, 1997 |