검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers Brytayskyi I, Husekova K, Myndrul V, Pavlenko M, Coy E, Zaleski K, Gregusova D, Yate L, Smyntyna V, Iatsunsky I Applied Surface Science, 471, 686, 2019 |
| 2 |
Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts Mikolasek M, Frohlich K, Husekova K, Racko J, Rehacek V, Chymo F, Tapajna M, Harmatha L Applied Surface Science, 461, 48, 2018 |
| 3 |
Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties Tapajna M, Stoklas R, Gregusova D, Gucmann F, Husekova K, Hascik S, Frohlich K, Toth L, Pecz B, Brunner F, Kuzmik J Applied Surface Science, 426, 656, 2017 |
| 4 |
Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors Aarik L, Arroval T, Rammula R, Mandar H, Sammelselg V, Hudec B, Husekova K, Frohlich K, Aarik J Thin Solid Films, 565, 19, 2014 |
| 5 |
Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O-3: Growth of high-permittivity dielectrics with low leakage current Aarik J, Arroval T, Aarik L, Rammula R, Kasikov A, Mandar H, Hudec B, Husekova K, Frohlich K Journal of Crystal Growth, 382, 61, 2013 |
| 6 |
Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks Paskaleva A, Tapajna M, Dobrocka E, Husekova K, Atanassova E, Frohlich K Applied Surface Science, 257(17), 7876, 2011 |
| 7 |
Growth of RuO2 thin films by liquid injection atomic layer deposition Husekova K, Dobrocka E, Rosova A, Soltys J, Satka A, Fillot F, Frohlich K Thin Solid Films, 518(16), 4701, 2010 |
| 8 |
InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases Cico K, Kuzmik J, Liday J, Husekova K, Pozzovivo G, Carlin JF, Grandjean N, Pogany D, Vogrincic P, Frohlich K Journal of Vacuum Science & Technology B, 27(1), 218, 2009 |
| 9 |
Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes Frohlich K, Tapajna M, Rosova A, Dobrocka E, Husekova K, Aarik J, Aidla A Electrochemical and Solid State Letters, 11(6), G19, 2008 |
| 10 |
Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition Frohlich K, Luptak R, Husekova K, Cico K, Tapajna M, Weber U, Baumann PK, Lindner J, Espinos JP Journal of the Electrochemical Society, 153(8), F176, 2006 |