화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses
Liu KW, Young SJ, Chang SJ, Hsueh TH, Chen YZ, Chen KJ, Hung H, Wang SM, Wu YL
Journal of Crystal Growth, 347(1), 113, 2012
2 Test of covariance changes without a large sample and its application to fault detection and classification
Hung H, Chen AG
Journal of Process Control, 22(6), 1113, 2012
3 Improvement of (11-22) GaN on m-Plane Sapphire With CrN Interlayer by Using Molecular Beam Epitaxy
Liu KW, Chang SJ, Young SJ, Hsueh TH, Hung H, Mai YC, Wang SM, Chen YZ
Journal of the Electrochemical Society, 158(10), H983, 2011
4 InGaN/GaN multiple-quantum-well LEDs with Si-doped barriers
Hung H, Lam KT, Chang SJ, Chen CH, Kuan H, Sun YX
Journal of the Electrochemical Society, 155(6), H455, 2008
5 Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD
Hung H, Chen CH, Chang SJ, Kuan H, Lin RM, Liu CH
Journal of Crystal Growth, 298, 246, 2007
6 Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures
Jhou YD, Chen CH, Chuang RW, Chang SJ, Su YK, Chang PC, Chen PC, Hung H, Wang SM, Yu CL
Solid-State Electronics, 49(8), 1347, 2005
7 Strength of solvent-exposed salt-bridges
Luo R, David L, Hung H, Devaney J, Gilson MK
Journal of Physical Chemistry B, 103(4), 727, 1999
8 Temperature-Dependence of Aqueous Solubility of Selected Chlorobenzenes, Polychlorinated-Biphenyls, and Dibenzofuran
Shiu WY, Wania F, Hung H, Mackay D
Journal of Chemical and Engineering Data, 42(2), 293, 1997