검색결과 : 44건
| No. | Article |
|---|---|
| 1 |
Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ, Houston PA Journal of Crystal Growth, 459, 185, 2017 |
| 2 |
Origins of hillock defects on GaN templates grown on Si(111) Han Y, Zhu D, Zhu T, Humphreys CJ, Wallis DJ Journal of Crystal Growth, 434, 123, 2016 |
| 3 |
Growth of free-standing bulk wurtzite AlxGa1-xN layers by molecular beam epitaxy using a highly efficient RF plasma source Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ, Foxon CT Journal of Crystal Growth, 456, 151, 2016 |
| 4 |
The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method Massabuau FCP, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ, Oliver RA Journal of Crystal Growth, 386, 88, 2014 |
| 5 |
Evaluation of growth methods for the heteroepitaxy of non-polar (11(2)over-bar0) GAN on sapphire by MOVPE Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P, Oliver RA Journal of Crystal Growth, 408, 32, 2014 |
| 6 |
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ, Oliver RA Journal of Crystal Growth, 383, 12, 2013 |
| 7 |
The effect of dislocations on the efficiency of InGaN/GaN solar cells Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F, Humphreys CJ Solar Energy Materials and Solar Cells, 117, 279, 2013 |
| 8 |
Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ, Humphreys CJ Thin Solid Films, 520(7), 3064, 2012 |
| 9 |
Defect reduction processes in heteroepitaxial non-polar a-plane GaN films Hao R, Kappers MJ, Moram MA, Humphreys CJ Journal of Crystal Growth, 337(1), 81, 2011 |
| 10 |
Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire Kappers MJ, Moram MA, Rao DVS, McAleese C, Humphreys CJ Journal of Crystal Growth, 312(3), 363, 2010 |