| 1 |
Time resolved electroluminescence measurements on GaAs and GaN devices
Hulse JE, Sarault K, Rowell NL, Simard-Normandin M, Bardwell JA
Journal of Vacuum Science & Technology A, 24(3), 686, 2006 |
| 2 |
X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxide
Chen HW, Landheer D, Chao TS, Hulse JE, Huang TY
Journal of the Electrochemical Society, 148(7), F140, 2001 |
| 3 |
Characterization of GaAs(110) nitrided by an electron-cyclotron resonance plasma source using N-2
Landheer D, Rajesh K, Hulse JE, Sproule GI, McCaffrey J, Quance T, Graham MJ
Journal of the Electrochemical Society, 147(2), 731, 2000 |
| 4 |
Back-surface passivation of polycrystalline CdSe thin-film transistors
Landheer D, Masson DP, Belkouch S, Das SR, Quance T, LeBrun L, Hulse JE
Journal of Vacuum Science & Technology A, 16(2), 834, 1998 |
| 5 |
Factors affecting interface-state density and stress of silicon nitride films deposited on Si by electron-cyclotron resonance chemical vapor deposition
Landheer D, Rajesh K, Masson D, Hulse JE, Sproule GI, Quance T
Journal of Vacuum Science & Technology A, 16(5), 2931, 1998 |
| 6 |
Formation of High-Quality Silicon Dioxide Films by Electron-Cyclotron-Resonance Plasma Oxidation and Plasma-Enhanced Chemical-Vapor-Deposition
Landheer D, Hulse JE, Quance T
Thin Solid Films, 293(1-2), 52, 1997 |
| 7 |
Formation of High-Quality Nitrided Silicon Dioxide Films Using Electron-Cyclotron-Resonance Chemical-Vapor-Deposition with Nitrous-Oxide and Silane
Landheer D, Tao Y, Hulse JE, Quance T, Xu DX
Journal of the Electrochemical Society, 143(5), 1681, 1996 |
| 8 |
Analysis of Si/Si(X)Ge(1-X)/Si Microstructures by Spectroscopic Ellipsometry
Hulse JE, Heller LM, Rolfe SJ
Thin Solid Films, 248(2), 140, 1994 |
