화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Rapid thermal annealing of InAs/GaAs quantum dots with a low-temperature-grown InGaP cap layer
Jiang WH, Thompson DA, Hul'ko O, Robinson BJ, Mascher P
Journal of Vacuum Science & Technology A, 24(3), 700, 2006
2 Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)
Zhao ZM, Hul'ko O, Kim HJ, Liu J, Shi B, Xie YH
Thin Solid Films, 483(1-2), 158, 2005
3 Growth and characterization of InAs quantum dots on Si(001) substrates
Zhao ZM, Hul'ko O, Kim HJ, Liu J, Sugahari T, Shi B, Xie YH
Journal of Crystal Growth, 271(3-4), 450, 2004
4 Influence of ion implantation induced defects on formation of buried CoSi2 structures in Si(100)
Hul'ko O, Fraser J, Zinke-Allmang M
Thin Solid Films, 413(1-2), 52, 2002