검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Investigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications Hwang E, Mookerjea S, Hudait MK, Datta S Solid-State Electronics, 62(1), 82, 2011 |
| 2 |
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy Wong YY, Chang EY, Wu YH, Hudait MK, Yang TH, Chang JR, Ku JT, Chou WC, Chen CY, Maa JS, Lin YC Thin Solid Films, 519(19), 6208, 2011 |
| 3 |
The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE Wong YY, Chang EY, Yang TH, Chang JR, Ku JT, Hudait MK, Chou WC, Chen M, Lin KL Journal of the Electrochemical Society, 157(7), H746, 2010 |
| 4 |
Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents Wu YC, Chang EY, Lin YC, Kei CC, Hudait MK, Radosavljevic M, Wong YY, Chang CT, Huang JC, Tang SH Solid-State Electronics, 54(1), 37, 2010 |
| 5 |
Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1-y buffers by molecular beam epitaxy Hudait MK, Brenner M, Ringel SA Solid-State Electronics, 53(1), 102, 2009 |
| 6 |
Atomic diffusion and band lineups at In0.53Ga0.47As-on-InP heterointerfaces Smith PE, Goss SH, Gao M, Hudait MK, Lin Y, Ringel SA, Brillson LJ Journal of Vacuum Science & Technology B, 23(4), 1832, 2005 |
| 7 |
Atomic layer diffusion and electronic structure at In0.53Ga0.47As/InP interfaces Smith PE, Goss SH, Bradley ST, Hudait MK, Lin Y, Ringel SA, Brillson LJ Journal of Vacuum Science & Technology B, 22(2), 554, 2004 |
| 8 |
Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures Hudait MK, Venkateswarlu P, Krupanidhi SB Solid-State Electronics, 45(1), 133, 2001 |
| 9 |
Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy Hudait MK, Krupanidhi SB Materials Research Bulletin, 35(1), 125, 2000 |
| 10 |
Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation Hudait MK, Krupanidhi SB Materials Research Bulletin, 35(6), 909, 2000 |