검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
InAs/AlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications Lange MD, Tsai RS, Deal WR, Nam PS, Lee LJ, Sandhu RS, Hsing R, Poust BD, Kraus JL, Gutierrez-Aitken AL, Bennett BR, Boos JB, Noori AM, Hayashi SL, Goorsky MS Journal of Vacuum Science & Technology B, 24(6), 2581, 2006 |
| 2 |
Strain relaxation and surface roughness of InxAl1-xAs graded buffer layers grown on InP for 6.05 angstrom applications Noori AM, Sandhu RS, Hayashi SL, Meserole ED, Hardev V, Cavus A, Lange M, Monier C, Hsing R, Sawdai D, Wojtowicz M, Block TR, Gutierrez-Aitken A, Goorsky MS Journal of Vacuum Science & Technology B, 22(5), 2303, 2004 |
| 3 |
Interfacial roughness and carrier scattering due to misfit dislocations in In0.52Al0.48As/In0.75Ga0.25As/InP structures Naidenkova M, Goorsky MS, Sandhu R, Hsing R, Wojtowicz M, Chin TP, Block TR, Streit DC Journal of Vacuum Science & Technology B, 20(3), 1205, 2002 |
| 4 |
Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers Goorsky MS, Sandhu R, Hsing R, Naidenkova M, Wojtowicz M, Chin TP, Block TR, Streit DC Journal of Vacuum Science & Technology B, 18(3), 1658, 2000 |