| 1 |
Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition
Yuan TT, Kuei PY, Hsieh LZ, Li TC, Lin WJ
Journal of Crystal Growth, 312(15), 2239, 2010 |
| 2 |
Characteristics of high dielectric cubic Gd2O3 thin films deposited on cubic LaAlO3 by pulsed laser deposition
Chang KS, Hsieh LZ, Huang SK, Lee CY, Chiu YS
Journal of Crystal Growth, 310(7-9), 1961, 2008 |
| 3 |
The characteristics of platinum diffusion in n-type GaN
Yeh DH, Hsieh LZ, Chang LB, Jeng MJ
Applied Surface Science, 253(16), 6910, 2007 |
| 4 |
Study of AIGaInP multiquantum-well/double heterostructure light-emitting diodes with in-added GaP window layer regrown by antimony-based liquid phase epitaxy
Chang LB, Kuei PY, Hsieh LZ, Chang LY, Lin RM
Journal of Vacuum Science & Technology A, 22(3), 807, 2004 |
| 5 |
The characteristics of InGaAs/GaAs modulation-doped photodetectors with two absorption bands
Hsieh LZ, Kuei PY
Solid-State Electronics, 47(8), 1413, 2003 |
| 6 |
Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy
Nee TE, Lin RM, Hsieh LZ, Chang LB
Journal of Vacuum Science & Technology A, 20(3), 1128, 2002 |
