검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy Lai FI, Kuo SY, Wang JS, Hsiao RS, Kuo HC, Chi J, Wang SC, Wang HS, Liang CT, Chen YF Journal of Crystal Growth, 291(1), 27, 2006 |
| 2 |
High-performance 30-period quantum-dot infrared photodetector Chou ST, Lin SY, Hsiao RS, Chi JY, Wang JS, Wu MC, Chen JF Journal of Vacuum Science & Technology B, 23(3), 1129, 2005 |
| 3 |
High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy Wang JS, Kovsh AR, Hsiao RS, Chen LP, Chen JF, Lay TS, Chi JY Journal of Crystal Growth, 262(1-4), 84, 2004 |
| 4 |
Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m Wang JS, Hsiao RS, Lin G, Lin KF, Liu HY, Lai CM, Wei L, Liang CY, Chi JY, Kovsh AR, Maleev NA, Livshits DA, Chen JF, Yu HC, Ustinov VM Journal of Vacuum Science & Technology B, 22(6), 2663, 2004 |