검색결과 : 30건
| No. | Article |
|---|---|
| 1 |
Evaluation of the effective work-function of monolayer graphene on silicon dioxide by internal photoemission spectroscopy Trepalin V, Asselberghs I, Brems S, Huyghebaert C, Radu I, Afanas'ev V, Houssa M, Stesmans A Thin Solid Films, 674, 39, 2019 |
| 2 |
Point defects in MoS2: Comparison between first-principles simulations and electron spin resonance experiments Houssa M, Iordanidou K, Pourtois G, Afanas'ev VV, Stesmans A Applied Surface Science, 416, 853, 2017 |
| 3 |
Buckled two-dimensional Xene sheets Molle A, Goldberger J, Houssa M, Xu Y, Zhang SC, Akinwande D Nature Materials, 16(2), 163, 2017 |
| 4 |
Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 mu A) Belmonte A, Fantini A, Redolfi A, Houssa M, Jurczak M, Goux L Solid-State Electronics, 125, 189, 2016 |
| 5 |
Two-Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface Chiappe D, Scalise E, Cinquanta E, Grazianetti C, van den Broek B, Fanciulli M, Houssa M, Molle A Advanced Materials, 26(13), 2096, 2014 |
| 6 |
Theoretical aspects of graphene-like group IV semiconductors Houssa M, van den Broek B, Scalise E, Ealet B, Pourtois G, Chiappe D, Cinquanta E, Grazianetti C, Fanciulli M, Molle A, Afanas'ev VV, Stesmans A Applied Surface Science, 291, 98, 2014 |
| 7 |
First-principles electronic functionalization of silicene and germanene by adatom chemisorption van den Broek B, Houssa M, Scalise E, Pourtois G, Afanas'ev VV, Stesmans A Applied Surface Science, 291, 104, 2014 |
| 8 |
Vibrational properties of epitaxial silicene layers on (111) Ag Scalise E, Cinquanta E, Houssa M, van den Broek B, Chiappe D, Grazianetti C, Pourtois G, Ealet B, Molle A, Fanciulli M, Afanas'ev VV, Stesmans A Applied Surface Science, 291, 113, 2014 |
| 9 |
Nature of the filament formed in HfO2-based resistive random access memory De Stefano F, Houssa M, Afanas'ev VV, Kittl JA, Jurczak M, Stesmans A Thin Solid Films, 533, 15, 2013 |
| 10 |
Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridge memory stacks Afanas'ev VV, De Stefano F, Houssa M, Stesmans A, Goux L, Opsomer K, Detavernier C, Kittl JA, Jurczak M Thin Solid Films, 533, 34, 2013 |