화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Growth of undoped (vanadium-Free) semi-insulating 6H-SiC single crystals
Anderson TA, Barrett DL, Chen J, Emorhokpor E, Gupta A, Hopkins RH, Souzis AE, Tanner CD, Yoganathan M, Zwieback I
Materials Science Forum, 483, 35, 2005
2 Advanced PVT growth of 2 & 3-inch diameter 6H SiC crystals
Anderson TA, Barrett DL, Chen J, Elkington WT, Emorhokpor E, Gupta A, Johnson CJ, Hopkins RH, Martin C, Kerr T, Semenas E, Souzis AE, Tanner CD, Yoganathan M, Zwieback I
Materials Science Forum, 457-460, 75, 2004
3 Molecular-Beam Epitaxy Growth and Characterization of GaN and AlxGa1-Xn on 6H-SiC
Sinharoy S, Augustine G, Rowland LB, Agarwal AK, Messham RL, Driver MC, Hopkins RH
Journal of Vacuum Science & Technology A, 14(3), 896, 1996
4 Characterization of Polishing-Related Surface Damage in (0001) Silicon-Carbide Substrates
Qian W, Skowronski M, Augustine G, Glass RC, Hobgood HM, Hopkins RH
Journal of the Electrochemical Society, 142(12), 4290, 1995