| 1 |
Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers
Mansoori A, Addamane SJ, Renteria EJ, Shima DM, Behzadirad M, Vadiee E, Honsberg C, Balakrishnan G
Solar Energy Materials and Solar Cells, 185, 21, 2018 |
| 2 |
Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II-Transmission electron microscopy and atomic force microscopy
Faleev N, Sustersic N, Bhargava N, Kolodzey J, Magonov S, Smith DJ, Honsberg C
Journal of Crystal Growth, 365, 35, 2013 |
| 3 |
Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I-High-resolutionx-ray diffraction and x-ray topography
Faleev N, Sustersic N, Bhargava N, Kolodzey J, Kazimirov AY, Honsberg C
Journal of Crystal Growth, 365, 44, 2013 |
| 4 |
Crystalline perfection of GaN and AlN epitaxial layers and the main features of structural transformation of crystalline defects
Faleev N, Honsberg C, Jani O, Ferguson I
Journal of Crystal Growth, 300(1), 246, 2007 |
| 5 |
Absorption and transport via tunneling in quantum-well solar cells
Jani O, Honsberg C
Solar Energy Materials and Solar Cells, 90(18-19), 3464, 2006 |
| 6 |
Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications
Levy MY, Honsberg C
Solid-State Electronics, 50(7-8), 1400, 2006 |
