검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Antiferroelectric Phase Transition in a Proton-Transfer Salt of Squaric Acid and 2,3-Dimethylpyrazine Lengyel J, Wang XP, Choi ES, Besara T, Schonemann R, Ramakrishna SK, Holleman J, Blockmon AL, Hughey KD, Liu TH, Hudis J, Beery D, Balicas L, McGill SA, Hanson K, Musfeldt JL, Siegrist T, Dalal NS, Shatruk M Journal of the American Chemical Society, 141(41), 16279, 2019 |
| 2 |
Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet Kovalgin AY, Isai G, Holleman J, Schmitz J Journal of the Electrochemical Society, 155(2), G21, 2008 |
| 3 |
Low-temperature LPCVD of polycrystalline GexSi1-x films with high germanium content Kovalgin A, Holleman J Journal of the Electrochemical Society, 153(5), G363, 2006 |
| 4 |
Low-power, antifuse-based silicon chemical sensor on a suspended membrane Kovalgin AY, Holleman J, Iordache G, Jenneboer T, Falke F, Zieren V, Goossens MJ Journal of the Electrochemical Society, 153(9), H181, 2006 |
| 5 |
Atomic layer deposition of W1.5N barrier films for Cu metallization Bystrova S, Aarnink AAI, Holleman J, Wolters RAM Journal of the Electrochemical Society, 152(7), G522, 2005 |
| 6 |
Low hydrogen content silicon nitride films deposited at room temperature with an ECR plasma source Isai GI, Holleman J, Wallinga H, Woerlee PH Journal of the Electrochemical Society, 151(10), C649, 2004 |
| 7 |
Conduction and trapping mechanisms in SiO2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition Isai GI, Holleman J, Wallinga H, Woerlee PH Journal of Vacuum Science & Technology B, 22(3), 1022, 2004 |
| 8 |
Incubation-Time Measurements in Thin-Film Deposition Rem JB, Holleman J, Verweij JF Journal of the Electrochemical Society, 144(6), 2101, 1997 |
| 9 |
Diffusion and Electrical-Properties of Boron and Arsenic Doped Poly-Si and Poly-Gexsi1-X (X-Similar-to-0.3) as Gate Material for Sub-0.25 Mu-M Complementary Metal-Oxide-Semiconductor Applications Salm C, Vanveen DT, Gravesteijn DJ, Holleman J, Woerlee PH Journal of the Electrochemical Society, 144(10), 3665, 1997 |
| 10 |
Furnace and Rapid Thermal Crystallization of Amorphous Gexsi1-X and Si for Thin-Film Transistors Rem JB, Deleuw MC, Holleman J, Verweij JF Thin Solid Films, 296(1-2), 152, 1997 |