검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure VanMil BL, Guo HC, Holbert LJ, Lee K, Myers TH, Liu T, Korakakis D Journal of Vacuum Science & Technology B, 22(4), 2149, 2004 |
| 2 |
Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN Myers TH, VanMil BL, Holbert LJ, Peng CY, Stinespring CD, Alam J, Freitas JA, Dmitriev VA, Pechnikov A, Shapovalova Y, Ivantsov V Journal of Crystal Growth, 246(3-4), 244, 2002 |