검색결과 : 24건
| No. | Article |
|---|---|
| 1 |
Monolithic integration of InP-based transistors on Si substrates using MBE Liu WK, Lubyshev D, Fastenau JM, Wu Y, Bulsara MT, Fitzgerald EA, Urteaga M, Ha W, Bergman J, Brar B, Hoke WE, LaRoche JR, Herrick KJ, Kazior TE, Clark D, Smith D, Thompson RF, Drazek C, Daval N Journal of Crystal Growth, 311(7), 1979, 2009 |
| 2 |
In situ molecular beam epitaxial growth of SiN films using a source port compatible electron-gun for silicon evaporation Hoke WE, Kennedy TD, Torabi A, Vandermeulen KY, Mosca JJ Journal of Vacuum Science & Technology B, 26(3), 1074, 2008 |
| 3 |
Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates Lubyshev D, Fastenau JM, Wu Y, Liu WK, Bulsara MT, Fitzgerald EA, Hoke WE Journal of Vacuum Science & Technology B, 26(3), 1115, 2008 |
| 4 |
Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions Hoke WE, Torabi A, Mosca JJ, Kennedy TD Journal of Vacuum Science & Technology B, 25(3), 978, 2007 |
| 5 |
Reaction of molecular beam epitaxial grown AIN nucleation layers with SiC substrates Hoke WE, Torabi A, Hallock RB, Mosca JJ, Kennedy TD Journal of Vacuum Science & Technology B, 24(3), 1500, 2006 |
| 6 |
Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvature Torabi A, Hoke WE, Mosca JJ, Siddiqui JJ, Hallock RB, Kennedy TD Journal of Vacuum Science & Technology B, 23(3), 1194, 2005 |
| 7 |
Material properties and performance of metamorphic optoelectronic integrated circuits grown by molecular beam epitaxy on GaAs substrates Hoke WE, Leoni RE, Whelan CS, Kennedy TD, Torabi A, Marsh PF, Zhang Y, Xu C, Hsieh KC Journal of Vacuum Science & Technology B, 22(3), 1554, 2004 |
| 8 |
Properties of metamorphic materials and device structures on GaAs substrates Hoke WE, Kennedy TD, Torabi A, Whelan CS, Marsh PF, Leoni RE, Lardizabal SM, Zhang Y, Jang JH, Adesida I, Xu C, Hsieh KC Journal of Crystal Growth, 251(1-4), 804, 2003 |
| 9 |
High indium metamorphic HEMT on a GaAs substrate Hoke WE, Kennedy TD, Torabi A, Whelan CS, Marsh PF, Leoni RE, Xu C, Hsieh KC Journal of Crystal Growth, 251(1-4), 827, 2003 |
| 10 |
High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications Hoke WE, Leoni RE, Whelan CS, Marsh PF, Jang JH, Adesida I, Joshi AM, Wang X Journal of Vacuum Science & Technology B, 20(3), 1209, 2002 |