검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.30 on Si(001) as alternative gate dielectrics Cosceev A, Muller-Sajak D, Pfnur H, Hofmann KR Thin Solid Films, 518, S281, 2010 |
| 2 |
Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon Wietler TF, Bugiel E, Hofmann KR Applied Surface Science, 255(3), 778, 2008 |
| 3 |
Relaxed germanium films on silicon (110) Wietler TF, Bugiel E, Hofmann KR Thin Solid Films, 517(1), 272, 2008 |
| 4 |
Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001) Wietler TF, Bugiel E, Hofmann KR Thin Solid Films, 508(1-2), 6, 2006 |
| 5 |
Temperature-dependent growth mechanisms of CaF2 on Si(111) Wang CR, Muller BH, Bugiel E, Hofmann KR Journal of Vacuum Science & Technology A, 22(5), 2182, 2004 |
| 6 |
Boron surfactant enhanced growth of thin Si films on CaF2/Si Wang CR, Muller BH, Bugiel E, Wietler T, Bierkandt M, Hofmann KR Journal of Vacuum Science & Technology A, 22(6), 2246, 2004 |
| 7 |
Surfactant enhanced growth of thin Si films on CaF2/Si(111) Wang CR, Muller BH, Bugiel E, Hofmann KR Applied Surface Science, 211(1-4), 203, 2003 |
| 8 |
Epitaxy of atomically flat CaF2 films on Si(111) substrates Wang CR, Muller BH, Hofmann KR Thin Solid Films, 410(1-2), 72, 2002 |
| 9 |
Bi surfactant mediated epitaxy of Ge on Si(111) Horn-von Hoegen M, Heringdorf FJMZ, Kammler M, Schaeffer C, Reinking D, Hofmann KR Thin Solid Films, 343-344, 579, 1999 |
| 10 |
Surfactant-grown low-doped germanium layers on silicon with high electron mobilities Hofmann KR, Reinking D, Kammler M, Horn-von Hoegen M Thin Solid Films, 321(1-2), 125, 1998 |