검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Long range, non-destructive characterization of GaN substrates for power devices Gallagher JC, Anderson TJ, Luna LE, Koehler AD, Hite JK, Mahadik NA, Hobart KD, Kub FJ Journal of Crystal Growth, 506, 178, 2019 |
| 2 |
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD Hite JK, Anderson TJ, Luna LE, Gallagher JC, Mastro MA, Freitas JA, Eddy CR Journal of Crystal Growth, 498, 352, 2018 |
| 3 |
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN Feigelson BN, Anderson TJ, Abraham M, Freitas JA, Hite JK, Eddy CR, Kub FJ Journal of Crystal Growth, 350(1), 21, 2012 |
| 4 |
Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency Mastro MA, Kim BJ, Jung Y, Hite JK, Eddy CR, Kim J Current Applied Physics, 11(3), 682, 2011 |
| 5 |
Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction Kim HY, Jung Y, Kim SH, Ahn J, Mastro MA, Hite JK, Eddy CR, Kim J Journal of Crystal Growth, 326(1), 65, 2011 |
| 6 |
Electrical and optical characterization of GaN micro-wires Jung Y, Ahn J, Mastro MA, Hite JK, Feigelson B, Eddy CR, Kim J Journal of Crystal Growth, 326(1), 81, 2011 |
| 7 |
GaN vertical and lateral polarity heterostructures on GaN substrates Hite JK, Bassim ND, Twigg ME, Mastro MA, Kub FJ, Eddy CR Journal of Crystal Growth, 332(1), 43, 2011 |
| 8 |
GaN single crystals of different habit grown from solution at near atmospheric pressure Feigelson BN, Hite JK, Garces NY, Freitas JA, Tischler JG, Klein PB Journal of Crystal Growth, 312(18), 2551, 2010 |
| 9 |
Approach for dislocation free GaN epitaxy Hite JK, Mastro MA, Eddy CR Journal of Crystal Growth, 312(21), 3143, 2010 |
| 10 |
Photopolymerization of Self-Assembled Monolayers of Diacetylenic Alkylphosphonic Acids on Group-III Nitride Substrates Li F, Shishkin E, Mastro MA, Hite JK, Eddy CR, Edgar JH, Ito T Langmuir, 26(13), 10725, 2010 |