| 1 |
Molecular beam epitaxial growth of GaN on (100)- and (111) Si substrates coated with a thin SiC layer
Cervantes-Contreras M, Lopez-Lopez M, Melendez-Lira M, Tamura M, Hiroyama Y
Journal of Crystal Growth, 227, 425, 2001 |
| 2 |
Growth of high-quality cubic GaN on Si(001) coated with ultra-thin flat SiC by plasma-assisted molecular-beam epitaxy
Wang D, Hiroyama Y, Tamura M, Ichikawa M, Yoshida S
Journal of Crystal Growth, 216(1-4), 44, 2000 |
| 3 |
Initial growth of cubic GaN on Si(001) coated with a thin flat SiC buffer layer
Wang D, Hiroyama Y, Tamura M, Ichikawa M, Yoshida S
Journal of Crystal Growth, 220(3), 204, 2000 |
| 4 |
In situ observations of nucleation and coalescence stages in Ge growth on Si surfaces using transmission electron microscope combined with molecular beam epitaxy chamber
Hiroyama Y, Tamura M
Journal of Vacuum Science & Technology A, 16(5), 2956, 1998 |
| 5 |
In situ transmission electron microscope observations of misfit strain relaxation and coalescence stages of Si1-xGex on Si(001)
Hiroyama Y, Tamura M
Thin Solid Films, 334(1-2), 1, 1998 |
